Crystallization apparatus, crystallization method, and phase...

Details Crystallization apparatus, crystallization method, and phase... Crystallization apparatus, crystallization method, and phase...

2006-03-28

2006-03-28

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07018749

ABSTRACT:
A crystallization apparatus includes an image forming optical system which has an image side numerical aperture set to a value required to generate a light intensity distribution with an inverse peak pattern and sets an amorphous semiconductor film and a phase shift mask to an optically conjugate relationship. The phase shift mask has a boundary area which extends along a first axial line, and a first area and a second area which are arranged on both sides of the boundary area have a predetermined phase difference therebetween. The boundary area has a phase distribution which varies from a phase of the first area to a phase of the second area.

REFERENCES:
patent: 6583855 (2003-06-01), Krikke et al.
patent: 6846617 (2005-01-01), Pierrat
patent: 1 047 119 (2000-10-01), None
C.-H. Oh, et al., Applied Surface Science 154-155, pp. 105-111, “Optimization of Phase-Modulated Excimer-Laser Annealing Method for Growing Highly-Packed Large-Grains in Si Thin-Films”, 2000.
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Surface Science, vol. 21, No. 5, pp. 278-287, 2000.

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