Image analysis – Applications – Manufacturing or product inspection
Reexamination Certificate
2006-01-24
2006-01-24
Bali, Vikkram (Department: 2623)
Image analysis
Applications
Manufacturing or product inspection
C382S145000, C356S237400
Reexamination Certificate
active
06990225
ABSTRACT:
An inspection method of a mask pattern for exposure comprises using substantially the same inspection wavelength as an exposure wavelength for use in the exposure apparatus and using a detection optical system of the inspection apparatus having a numerical aperture larger than a numerical aperture of a projection optical system of the exposure apparatus to prepare image data of the mask pattern for exposure using the detection optical system and reconstructing low-ordered diffracted light distribution obtained from the mask pattern for exposure by using the image data based on information of the detection optical system. The inspection method comprises using transfer simulation in the projection optical system of the exposure apparatus to obtain an image intensity distribution obtained on a wafer from the low-ordered diffracted light distribution and judging acceptance/rejection of inspection based on the obtained image intensity distribution.
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Pati, Y. C. et al., “Phase-Shifting Masks for Microlithography: Automated Design and Mask Requirements”, J. Opt. Soc. Am. A, vol. 11, No. 9, pp. 2438-2452, (Sep. 1994).
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Inoue Soichi
Tanaka Satoshi
Bali Vikkram
Finnegan Henderson Farabow Garrett & Dunner, LLP.
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