Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-07-11
2006-07-11
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C156S345420
Reexamination Certificate
active
07074720
ABSTRACT:
In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion18aformed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode member17for the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portion18bformed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.
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Arita Kiyoshi
Haji Hiroshi
Iwai Tetsuhiro
Sakemi Shoji
Norton Nadine G.
Pearne & Gordon LLP
Umez-Eronini Lynette T.
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