Solid-state image-sensing device

Details Solid-state image-sensing device Solid-state image-sensing device

2006-04-18

2006-04-18

Ometz, David L. (Department: 2615)

Television

Camera, system and detail

Solid-state image sensor

Reexamination Certificate

active

07030921

ABSTRACT:
In a solid-state image-sensing device, when an image sensing operation is performed in each pixel, a MOS transistor T1is turned on and a MOS transistor T4is turned off to make a MOS transistor T2operate in a subthreshold region. When a reset operation is performed in each pixel, the MOS transistor T1is turned off and the MOS transistor T4is turned on to feed a constant voltage to the gate and drain of the MOS transistor T2. Then, the MOS transistor T4is turned off, then the voltage at the node “a” is reset, and then a pulse signal φV is fed to a MOS transistor T5to obtain an output. By using the thus obtained output as compensation data, variations in sensitivity among individual pixels are reduced.

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U.S. Appl. No. 09/537,425, filed Mar. 27,2000, Hagihara.

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