Plasma CVD apparatus

Details Plasma CVD apparatus Plasma CVD apparatus

1997-09-10

2000-04-04

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118718, 118730, C23C 1600

Patent

active

060447923

ABSTRACT:
A continuous plasma CVD apparatus, characterized in that frequency of high-frequency bias is in the range of 50-900 KHz, a blocking condenser is provided between a thin film and a high-frequency source so that the product C.multidot.f of electrostatic capacity C of the blocking condenser and frequency f of the high-frequency source is 0.02 [F.multidot.Hz] or more, and the total of impedances of all the rollers provided in the route of from a substrate unwind roller to a rotating drum is 10 k.OMEGA. or more and the total of impedances of all the rollers provided in the route of from the rotating drum to a wind roller is 10 k.OMEGA. or more. According to this apparatus, it becomes possible to continuously form a film without causing damage and deterioration of the substrate.

REFERENCES:
patent: 5224441 (1993-07-01), Felts et al.
patent: 5258074 (1993-11-01), Okuda et al.
patent: 5437725 (1995-08-01), Schuster et al.
patent: 5464667 (1995-11-01), Kohler et al.
patent: 5743966 (1998-04-01), Woolley et al.

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