Organic thin film transistor comprising buffer layer

Details Organic thin film transistor comprising buffer layer Organic thin film transistor comprising buffer layer

2006-05-23

2006-05-23

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C313S504000

Reexamination Certificate

active

07049631

ABSTRACT:
Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, source-drain electrodes and a protective layer wherein a buffer layer is interposed between the organic semiconductor layer and the protective layer. Such a transistor minimizes the deterioration in the performance of the transistor due to ambient air containing oxygen and moisture, and the degeneration in the performance of the transistor caused during mounting a display device.

REFERENCES:
patent: 6855949 (2005-02-01), De Leeuw et al.
Hagen Klauk et al., “Contact Resistance in Organic Thin Film Transistors”, Solid-State Electronics, 47, 2003, pp. 297-301.

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