Strain balanced nitride heterojunction transistors

Details Strain balanced nitride heterojunction transistors Strain balanced nitride heterojunction transistors

2006-04-18

2006-04-18

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S190000, C257S020000

Reexamination Certificate

active

07030428

ABSTRACT:
A nitride based heterojunction transistor includes a substrate and a first Group III nitride layer, such as an AlGaN based layer, on the substrate. The first Group III-nitride based layer has an associated first strain. A second Group III-nitride based layer, such as a GaN based layer, is on the first Group III-nitride based layer. The second Group III-nitride based layer has a bandgap that is less than a bandgap of the first Group III-nitride based layer and has an associated second strain. The second strain has a magnitude that is greater than a magnitude of the first strain. A third Group III-nitride based layer, such as an AlGaN or AlN layer, is on the GaN layer. The third Group III-nitride based layer has a bandgap that is greater than the bandgap of the second Group III-nitride based layer and has an associated third strain. The third strain is of opposite strain type to the second strain. A source contact, a drain contact and a gate contact may be provided on the third Group III-nitride based layer. Nitride based heterojunction transistors having an AlGaN based bottom confinement layer, a GaN based channel layer on the bottom confinement layer and an AlGaN based barrier layer on the channel layer, the barrier layer having a higher concentration of aluminum than the bottom confinement layer, are also provided. Methods of fabricating such transistor are also provided.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4471366 (1984-09-01), Delagebeaudeuf et al.
patent: 4727403 (1988-02-01), Hilda et al.
patent: 4755867 (1988-07-01), Cheng
patent: 4788156 (1988-11-01), Stoneham et al.
patent: 4946547 (1990-08-01), Palmour et al.
patent: 5053348 (1991-10-01), Mishra et al.
patent: 5172197 (1992-12-01), Nguyen et al.
patent: 5192987 (1993-03-01), Khan et al.
patent: 5200022 (1993-04-01), Kong et al.
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5292501 (1994-03-01), Degenhardt et al.
patent: 5296395 (1994-03-01), Khan et al.
patent: 5298445 (1994-03-01), Asano
patent: RE34861 (1995-02-01), Davis et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5534462 (1996-07-01), Fiordalice et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5686737 (1997-11-01), Allen
patent: 5700714 (1997-12-01), Ogihara et al.
patent: 5701019 (1997-12-01), Matsumoto et al.
patent: 5705827 (1998-01-01), Baba et al.
patent: 5804482 (1998-09-01), Konstantinov et al.
patent: 5838706 (1998-11-01), Edmond et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 5877519 (1999-03-01), Jewell
patent: 5885860 (1999-04-01), Weitzel
patent: 5946547 (1999-08-01), Kim et al.
patent: 5990531 (1999-11-01), Taskar et al.
patent: 6028328 (2000-02-01), Riechert et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6072189 (2000-06-01), Duggan
patent: 6086673 (2000-07-01), Molnar
patent: 6121121 (2000-09-01), Koide
patent: 6150680 (2000-11-01), Eastman et al.
patent: 6165874 (2000-12-01), Powell et al.
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 6194241 (2001-02-01), Tsutsui et al.
patent: 6194742 (2001-02-01), Kern et al.
patent: 6218680 (2001-04-01), Carter, Jr. et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6429467 (2002-08-01), Ando
patent: 6448648 (2002-09-01), Boos
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6515316 (2003-02-01), Wojtowicz et al.
patent: 6548333 (2003-04-01), Smith
patent: 6586781 (2003-07-01), Wu et al.
patent: 6639255 (2003-10-01), Inoue et al.
patent: 2001/0015446 (2001-08-01), Inoue et al.
patent: 2001/0020700 (2001-09-01), Inoue et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2001/0040246 (2001-11-01), Ishii
patent: 2002/0008241 (2002-01-01), Edmond et al.
patent: 2002/0017696 (2002-02-01), Nakayama et al.
patent: 2002/0020341 (2002-02-01), Marchans et al.
patent: 2002/0066908 (2002-06-01), Smith
patent: 2002/0079508 (2002-06-01), Yoshida
patent: 2002/0119610 (2002-08-01), Nishii et al.
patent: 2002/0167023 (2002-11-01), Chavarkar et al.
patent: 2003/0017683 (2003-01-01), Emrick et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0102482 (2003-06-01), Saxler
patent: 2003/0123829 (2003-07-01), Taylor
patent: 2003/0145784 (2003-08-01), Thompson et al.
patent: 2003/0157776 (2003-08-01), Smith
patent: 2003/0213975 (2003-11-01), Hirose et al.
patent: 2004/0004223 (2004-01-01), Nagahama et al.
patent: 2004/0021152 (2004-02-01), Nguyen et al.
patent: 2004/0029330 (2004-02-01), Hussain et al.
patent: 2004/0241970 (2004-12-01), Ring
patent: 0 334 006 (1989-09-01), None
patent: 0 563 847 (1993-10-01), None
patent: 10-050982 (1998-02-01), None
patent: 11261053 (1999-09-01), None
patent: 02001230407 (2001-08-01), None
patent: 02002016087 (2002-11-01), None
patent: 2004-342810 (2004-12-01), None
patent: WO 93/23877 (1993-11-01), None
patent: WO 01/57929 (2001-08-01), None
patent: WO 02/13245 (2002-02-01), None
patent: WO 02/48434 (2002-06-01), None
patent: WO 03/049193 (2003-06-01), None
patent: WO 04/008495 (2004-01-01), None
Marchand et al. “Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors,”Journal of Applied Physicsvol. 89, No. 12, Jun. 15, 2001, pp. 7846-7851.
Waldrip et al. “Stress engineering during metalorganic chemical vapor deposition of AiGaN/GaN distributed Bragg reflectors,”Applied Physics Letters, vol. 78, No. 21, May 21, 2001, pp. 3205-3207.
Etzkorn et al. “Cracking of GaN films,”Journal of Applied Physics, vol. 89, No. 2, Jan. 15, 2001, pp. 1025-1034.
Sullivan et al. “High-Power 10-Ghz Operation of A1GaN HFET's on Insulating SiC,”IEEE Electron Device Letters, vol. 19, No. 6, Jun. 1998, pp. 198-200.
Sheppard et al. “Improved 10-Ghz Operation of GaN/A1GaN HEMTs on Silicon Carbide,”Materials Science Forum, vols. 338-342 (2000), pp. 1645-1646.
Wu et al. “High A1-Content A1GaN/GaN MODFET's for Ultrahigh Performance,”IEEE Electron Device Letters, vol. 19, No. 2, Feb.1998.
Yu et al. “Schottky barrier engineering in III-V nitrides via the piezoelectric effect,”Applied Physics Letters, vol. 73, No. 13, Sep. 28, 1998, pp. 1880-1882.
Kim et al. “Effects of step-graded A1χ-χN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition,”Applied Physics Letters, vol. 79, No. 17, Oct. 22, 2001, pp. 2713-2715.
International Search Report for PCT/US02/37244 dated Apr. 4, 2003.
Asbeck et al. “Piezoelectric charge densities in AIGaN/GaN HFETS,”Electronics Letters. vol. 33, No. 14, pp. 1230-1231, 1997.
Eastman et al. “GaN materials for high power microwave amplifiers,”Mat. Res. Soc. Symp. Proc. vol. 512 (1998).
Eastman et al. “Undoped A1GaN/GaN HEMTs for Microwave Power Amplification,”IEEE Transactions on Electron Devices. vol. 48, No. 3, Mar. 2001, pp. 479-485.
Egawa et al. “Recessed gate AIGaN/GaN modulation-doped field-effect transistors on sapphire,”Applied Physics Letters, vol. 76, No. 1, Jan. 3, 2000, pp. 121-123.
Gaska et al. “High-Temperature Performance of AIGaN/GaN HFET's on SiC Substrates,”IEEE Electron Device Letters. vol. 18, No. 1, p. 492, Oct. 1997.
Heikman et al., “Polarizatiion Effects in A1GaN/GaN and GaN/A1GaN/GaN heterostructures”, Journal of Applied Physics, vol. 93, No. 12, Jun. 15, 2003, pp. 10114-10118.
Karmalkar et al., “Resurf A1GaN/GaN HEMT for High Voltage Power Switching”,IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 373-375.
Kuzmik et al. “Annealing of Schottky contacts deposited on dry etched A1GaN/GaN,”Semiconductor Science and Technology. vol. 17, No. 11, Nov. 2002.
Neuburger et al. “Design of GaN-based Field Effect Transistor Structures based on Doping Screening of Polarization Fields,” WA 1.5, 7th Wide-Bandgap III-Nitride Workshop, Mar. 2002.
Ping et al. “DC and Microwave Performance

Affiliated with

Also associated with

Rating

Strain balanced nitride heterojunction transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Strain balanced nitride heterojunction transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strain balanced nitride heterojunction transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3557618