Method for monitoring quality of an insulation layer

Details Method for monitoring quality of an insulation layer Method for monitoring quality of an insulation layer

2006-03-28

2006-03-28

Nguyen, Vinh (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S1540PB

Reexamination Certificate

active

07019545

ABSTRACT:
The present invention utilizes wafer acceptance testing equipment to fast monitor the quality of an insulation layer. A plurality of swing time-dependent DC ramping voltages are applied to one of the electrode plates in a capacitor and each corresponding leakage current is measured to calculate each corresponding β value. Then, a ratio of each β value is calculated and a β-voltage curve is plotted to actually simulate the device failure.

REFERENCES:
patent: 4542340 (1985-09-01), Chakravarti et al.
patent: 6326792 (2001-12-01), Okada
S. Satoh et al, “Stress Induced Leakage Current of Tunnel Oxide Derived From Flash Memory Read-Disturb Characteristics,” Mar. 1995, Proc. IEEE 1995 Int. Conference on Microelectronic Test Structures, vol. 8, pp. 97-101.
Guoqiao Tao et al, “Fast wafer level monitoring of stress induced leakage current in deep sub-micron embedded non-volatile memory processes,” 2002 (Month Unavailable), IEEE, 2002 IRW Final Report, pp. 76-78.

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