Fabrication method for a deep trench isolation structure of...

Details Fabrication method for a deep trench isolation structure of... Fabrication method for a deep trench isolation structure of...

2006-05-09

2006-05-09

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S259000, C438S270000, C438S271000

Reexamination Certificate

active

07041572

ABSTRACT:
A fabrication method for a semiconductor device. On a semiconductor silicon substrate with a first type conductivity, an epitaxial layer with a second type conductivity and an oxide layer on the epitaxial layer are formed with at least a deep trench. Ion implantation is used to form an ion diffusion region with the first type conductivity which is formed in the epitaxial layer and surrounds the sidewall and bottom of the deep trench. An oxide liner is formed on the sidewall and bottom of the deep trench, and then an undoped polysilicon layer is formed to fill the deep trench. The combination of the ion diffusion region and the undoped polysilicon layer serves as a deep trench isolation structure.

REFERENCES:
patent: 5442214 (1995-08-01), Yang
patent: 6576516 (2003-06-01), Blanchard

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