Method for forming a polysilicon to polysilicon capacitor and ap

Details Method for forming a polysilicon to polysilicon capacitor and ap Method for forming a polysilicon to polysilicon capacitor and ap

1991-12-16

1993-03-16

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29571, 257370, 257311, 257379, H01G 410, H01G 700, H01L 2122

Patent

active

051950170

ABSTRACT:
A first polysilicon layer (18) is initially deposited onto a layer of field oxide (16). A dielectric (26) is formed on a portion of the first polysilicon layer (18). A second polysilicon layer (28) is deposited over the dielectric (26) and the first polysilicon layer (18). After the selective deposition of a mask (30) on to the second polysilicon layer (28), the polysilicon layers (18, 28) are anistropically etched to form a polysilicon to polysilicon capacitor (34) and a contact (36) of the capacitor (34). The dielectric (26) functions as an insulator for the capacitor (34) and as a barrier during anisotropic etching for protecting the underlying polysilicon layer (18).

REFERENCES:
patent: 4075045 (1978-02-01), Rideout
patent: 4345364 (1982-08-01), McElroy
patent: 4419812 (1983-12-01), Topich
patent: 4732865 (1988-03-01), Evans et al.
patent: 4805071 (1989-02-01), Hutter et al.

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