Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-04-18
2006-04-18
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S646000
Reexamination Certificate
active
07030429
ABSTRACT:
This invention provides a hetero-junction bipolar transistor with a new structure that prevent the corrector resistance from increasing as shrinking the size of the transistor. The bipolar transistor according to the invention comprises a substrate2, a collector layer6a, a base layer10aand an emitter layer12a. The collector layer6ais formed on a first region of the substrate. The base layer10ais formed on a second region of the substrate and has band gap energy smaller than that of the collector layer6aand that of the emitter layer12a. The plan shape of the first region is substantially same as that of the second region.
REFERENCES:
patent: 6885042 (2005-04-01), Yanagisawa et al.
patent: 6888180 (2005-05-01), Kotani et al.
patent: 6933545 (2005-08-01), Kawasaki et al.
patent: 2002/0105011 (2002-08-01), Yaegashi et al.
Kawasaki Takeshi
Yanagisawa Masaki
McDermott Will & Emery LLP
Sumitomo Electric Industries Ltd.
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