Charge transfer element having high output sensitivity

Details Charge transfer element having high output sensitivity Charge transfer element having high output sensitivity

2006-07-11

2006-07-11

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S218000, C257S220000, C257S221000, C257S222000, C438S048000, C438S078000, C438S079000

Reexamination Certificate

active

07075128

ABSTRACT:
A charge transfer element comprising a reverse conductive type well formed on the surface of one conductive type semiconductor substrate, the one conductive type channel region extending in one direction relative to the well, a transfer electrode formed intersecting the channel region, a floating diffusion region formed continuous from the channel region, and an output transistor having a gate connected to the floating diffusion region. In a region where the output transistor is formed, the dopant density profile in the depth direction of the semiconductor substrate exhibits the maximum value relative to a middle region.

REFERENCES:
patent: 0499275 (1992-08-01), None
patent: 2000-091557 (2000-03-01), None

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