Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-03-07
2006-03-07
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185050, C365S185150
Reexamination Certificate
active
07009884
ABSTRACT:
A semiconductor storage device includes a memory cell array21in which a plurality of memory elements are arranged and a program verify circuit30. The memory element1, 33includes a gate electrode104formed on a semiconductor layer102via a gate insulator103, a channel region arranged below the gate electrode104, diffusion regions107a, 107bthat are located on opposite sides of the channel region and have a conductive type opposite to that of the channel region, and memory function bodies109that are located on opposite sides of the gate electrode104and have a function of retaining electric charge. A program load register32of the program verify circuit30eliminates a state that a memory element33which has initially been verified as having been correctly programmed needs to be further programmed.
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Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Yaoi Yoshifumi
Birch Stewart Kolasch & Birch
Hoang Huan
Sharp Kabushiki Kaisha
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