Spacer chalcogenide memory method

Details Spacer chalcogenide memory method Spacer chalcogenide memory method

2006-04-25

2006-04-25

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S304000, C438S573000

Reexamination Certificate

active

07033856

ABSTRACT:
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.

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