Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-04-04
2006-04-04
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S058000, C257S064000, C257S066000, C438S163000, C438S164000, C438S165000
Reexamination Certificate
active
07023015
ABSTRACT:
A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate insulator electric field at each of the driving voltages of the plurality of thin-film transistors is in a range of about 1 MV/cm to 2 MV/cm, and a drain concentration of p-type thin-film transistors (TFT) is in a range of about 3E+19/cm3to 1E+20/cm3.
REFERENCES:
patent: 6835607 (2004-12-01), Takemura et al.
Matsunaga Naoki
Sera Kenji
Takahashi Mitsuasa
Le Dung A.
NEC Corporation
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