Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-05-02
2006-05-02
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S715000, C438S720000, C438S240000, C216S072000, C216S076000, C505S411000
Reexamination Certificate
active
07037848
ABSTRACT:
In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least one oxygen-containing gas. In another aspect, the invention encompasses a method of forming a capacitor. An electrically conductive first layer is formed over a substrate, and a second layer is formed over the first layer. The second layer is a dielectric layer and comprises a complex of metal and oxygen. A conductive third layer is formed over the second layer. The first, second and third layers are patterned into a capacitor construction. The patterning of the second layer comprises exposing the second layer to at least one oxygen-containing gas while also exposing the second layer to physical etching conditions.
REFERENCES:
patent: 5098860 (1992-03-01), Chakravorty et al.
patent: 5337207 (1994-08-01), Jones et al.
patent: 5380704 (1995-01-01), Tarutani et al.
patent: 5486488 (1996-01-01), Kamiyama
patent: 5561075 (1996-10-01), Nakazawa
patent: 5792593 (1998-08-01), McClure et al.
patent: 5807650 (1998-09-01), Komano et al.
patent: 5840200 (1998-11-01), Nakagawa et al.
patent: 5889289 (1999-03-01), Cukauskas et al.
patent: 5930639 (1999-07-01), Schuele et al.
patent: 6177351 (2001-01-01), Beratan et al.
patent: 6358857 (2002-03-01), New
patent: 6528429 (2003-03-01), New
patent: 6753262 (2004-06-01), New
patent: 03-009517 (1991-01-01), None
patent: 05-013260 (1993-01-01), None
patent: 07-161931 (1995-06-01), None
patent: 07-221197 (1995-08-01), None
Stanley Wolf et al.; “Dry Etching Various Types of Thin Films”; Silicon Processing for the VLSI Era, vol. 1, 1986; p. 555.
Stanley Wolf et al.; “Etch Gases Used for Various Integrated Circuit Materials”; Silicon Processing for the VLSI Era, vol. 1, 1986; p. 581.
McClure, D. J. et al.; “Reactive sputter sectioning: A tool for polymer film analysis”; J. Vac. Sci. Technol. A: 6(3), abstract, May 1988, 1 page.
Moon et al., “Sputter Depth Profiling Analysis of Ta2O5on Si Without Preferential Sputtering by Energetic Oxygen Ion Beams”, Appl. Phys. Lett. (1993), 62(24); pp. 3094-3096.
Goudreau George A.
Micro)n Technology, Inc.
Wells St. John P.S.
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