Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1991-05-29

1993-03-16

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

324158P, 257701, 257750, H01L 2704, G01R 106, H01P 308

Patent

active

051949326

ABSTRACT:
A semiconductor integrated circuit device includes an internal circuit, input and output signal pads, a power source pad and a plurality of ground pads, a ground pattern, and a power source pattern. The internal circuit is formed in a predetermined region of a semiconductor substrate. The input and output signal pads are arranged on a semiconductor substrate surface and connected to the internal circuit. The power source pad and the plurality of ground pads are arranged on the semiconductor substrate surface and supply a power source to the internal circuit. The ground pattern is arranged in a region of the surface of the semiconductor substrate different from the region in which the internal circuit is formed, and the ground pattern connects the plurality of ground pads to each other. The power source pattern is formed below the ground pattern through an insulating interlayer and connected to the power source pad. The ground pattern, the insulating interlayer, and the power source pattern are cooperated to form an MIM type capacitor.

REFERENCES:
patent: 4267633 (1981-05-01), Seiler
patent: 4683384 (1987-07-01), Shibata et al.
patent: 4764723 (1988-08-01), Strid
patent: 4926234 (1990-05-01), Katoh

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