Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-05-16
2006-05-16
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S382000
Reexamination Certificate
active
07045873
ABSTRACT:
Provision of a body control contact adjacent a transistor and between the transistor and a contact to the substrate or well in which the transistor is formed allows connection and disconnection of the substrate of the transistor to and from a zero (ground) or substantially arbitrary low voltage in accordance with control signals applied to the gate of the transistor to cause the transistor to exhibit a variable threshold which maintains good performance at low supply voltages and reduces power consumption/dissipation which is particularly advantageous in portable electronic devices. Floating body effects (when the transistor substrate in disconnected from a voltage source in the “on” state) are avoided since the substrate is discharged when the transistor is switched to the “off” state. The transistor configuration can be employed with both n-type and p-type transistors which may be in complementary pairs.
REFERENCES:
patent: 5008723 (1991-04-01), van der Have
patent: 5689144 (1997-11-01), Williams
patent: 6504226 (2003-01-01), Bryant
patent: 6627952 (2003-09-01), Wollesen
patent: 6628160 (2003-09-01), Lin et al.
patent: 2003/0052373 (2003-03-01), Hayashi et al.
Chen Xiangdong
Chidambarrao Dureseti
Wang Geng
Abate Joseph P.
Nelms David
Nguyen Dao H.
Whitham Curtis Christofferson & Cook PC
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