Luminescent semiconductor element

Details Luminescent semiconductor element Luminescent semiconductor element

1991-03-28

1993-03-16

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

257 9, 257 12, 257 94, H01L 3300

Patent

active

051949229

ABSTRACT:
Described is a luminescent semiconductor element having the following structure: a first thick connecting semiconductor layer of uniform material composition, a thin over-graded layer arranged on the first semiconductor layer and comprising connecting semiconductor material whose composition has a linear gradient, a further connecting semiconductor layer arranged on the over-graded layer and having uniform material composition that determines the wavelength of the radiation emitted by the luminescent semiconductor element, an active layer arranged in the surface area of the further semiconductor layer and having a conductivity opposite to that of the further semiconductor layer in order to form a p-n junction, a rear contact arranged on the first connecting semiconductor layer, and a front contact arranged on the surface of the active layer.

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patent: 4495514 (1985-01-01), Lawrence et al.
patent: 4544938 (1985-10-01), Scholl
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patent: 4987472 (1991-01-01), Endo et al.
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5060028 (1991-10-01), Kuo et al.
Schwarzmichel, K: "Herstellung und . . . "; Siemens Forscl.-u. Eud-wicklungs-Ber. 9, 1980; S. 158-162.

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