Group-III nitride semiconductor device, production method...

Details Group-III nitride semiconductor device, production method... Group-III nitride semiconductor device, production method...

2006-04-25

2006-04-25

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S022000, C257S103000, C257S190000, C438S046000, C438S047000

Reexamination Certificate

active

07034330

ABSTRACT:
A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (AlXGaYIn1−(X+Y)N: 0≦X<1, 0<Y≦1 and 0<X+Y≦1) crystal layer vapor-phase grown on the crystal substrate, an ohmic electrode and an electrically conducting boron phosphide crystal layer provided between the ohmic electrode and the Group-III nitride semiconductor crystal layer, the ohmic electrode being disposed in contact with the boron phosphide crystal layer. Also disclosed is a method for producing the Group-III nitride semiconductor device, and a light-emitting diode including the Group-III nitride semiconductor device.

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Isamu Akasaki (compiler), “Advanced Electronics Series, I-21, Group-III Nitride Semiconductor”, 1stedition, pp. 288-289, Baifukan (Dec. 8, 1999).
Isamu Akasaki et al.; “Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Ga1-xAIxN (0<x≦0.4) Films Grown on Sapphire Substrate by MOVPE”; Journal of Crystal Growth (the Netherlands); vol. 98, pp. 209-219 (1989).
Isamu Akasaki (compiler); “Advanced Electronics Series, I-21, Group-III Nitride Semiconductor”; 1stedition, pp. 211-213, Baifukan (Dec. 8, 1999).

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