Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-05-30
2006-05-30
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257S762000
Reexamination Certificate
active
07053460
ABSTRACT:
A passive electrical device includes a first electrical conductor, a second electrical conductor disposed over the first conductor; and a third electrical conductor connecting the first conductor to the second conductor. The said first, second and third conductors are disposed on a semiconductor substrate. The sheet resistivity of the first conductor is approximately equal to the sheet resistivity of the second conductor.
REFERENCES:
patent: 4758896 (1988-07-01), Ito
patent: 5861647 (1999-01-01), Zhao et al.
patent: 6083802 (2000-07-01), Wen et al.
patent: 6114937 (2000-09-01), Burghartz et al.
patent: 6303423 (2001-10-01), Lin
patent: 6534374 (2003-03-01), Johnson et al.
VLSI Technology, Second Edition, S. M. Sze, (Mcgraw Hill, N.Y., 1988), p. 300.
Groves Robert A.
Malinowski John C.
Petrarca Kevin S.
Stein Kenneth J.
Subbanna Seshadri
Abate Joseph P.
Vu Hung
LandOfFree
Multi-level RF passive device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-level RF passive device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-level RF passive device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3541451