Semiconductor sensor with a field-effect transistor

Details Semiconductor sensor with a field-effect transistor Semiconductor sensor with a field-effect transistor

2006-09-26

2006-09-26

Tang, Minh N. (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010, C324S1540PB

Reexamination Certificate

active

07112987

ABSTRACT:
The semiconductor sensor has at least one field-effect transistor (31; 31, 32) which is coupled to a sensitive electrode and which has measuring phases that are interruptible by idle phases through a control device (50). During the idle phases, the field-effect transistor or transistors (30; 31, 32) together with their terminals is or are connected to the same potential, preferably the ground potential.

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patent: 5449939 (1995-09-01), Horiguchi et al.
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patent: 5911873 (1999-06-01), McCarron et al.
patent: 3123403 (1983-01-01), None
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patent: 0 753 892 (1997-01-01), None
patent: 2000187018 (2000-07-01), None

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