Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-04-25
2006-04-25
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S660000, C438S706000, C438S717000
Reexamination Certificate
active
07033951
ABSTRACT:
A process for forming a pattern contains steps of: forming a first mask pattern on a film to be etched on a substrate; forming a first pattern of the film to be etched by using the first mask pattern as a mask; forming a second mask pattern having a plane shape different from that of the first mask pattern by deforming the first mask pattern; and forming a second pattern of the film to be etched different from the first pattern by using the second mask pattern. By applying the process for forming a pattern, for example, to the formation of a semiconductor layer and source and drain electrodes of a TFT substrate of a liquid crystal display apparatus, the above-stated formation requiring two photoresist process steps in a conventional manufacturing method of a liquid crystal display apparatus can be carried out by only one process step, thereby reducing manufacturing cost thereof.
REFERENCES:
patent: 5320932 (1994-06-01), Haraguchi et al.
patent: 5618384 (1997-04-01), Chan et al.
patent: 5670801 (1997-09-01), Nakano
patent: 6331443 (2001-12-01), Lee et al.
Hayes & Soloway P.C.
NEC LCD Technologies Ltd.
Vinh Lan
LandOfFree
Process for forming pattern and method for producing liquid... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming pattern and method for producing liquid..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming pattern and method for producing liquid... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3540315