SOI substrate, element substrate, semiconductor device,...

Details SOI substrate, element substrate, semiconductor device,... SOI substrate, element substrate, semiconductor device,...

2006-09-26

2006-09-26

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S977000

Reexamination Certificate

active

07112514

ABSTRACT:
An SOI (Silicon On Insulator) substrate is provided with: a support substrate (201); a single crystal silicon layer (202) disposed above one surface of the support substrate; an insulation portion (205) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film (204).

REFERENCES:
patent: 4839707 (1989-06-01), Shields
patent: 5567967 (1996-10-01), Kusumoto
patent: 5572045 (1996-11-01), Takahashi et al.
patent: 5854494 (1998-12-01), Yamazaki et al.
patent: 5905553 (1999-05-01), Matsukawa et al.
patent: 6326642 (2001-12-01), Yamazaki et al.
patent: 6614479 (2003-09-01), Fukusho et al.

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