Method of affecting RRAM characteristics by doping PCMO thin...

Details Method of affecting RRAM characteristics by doping PCMO thin... Method of affecting RRAM characteristics by doping PCMO thin...

2006-04-18

2006-04-18

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S003000, C438S382000, C438S385000

Reexamination Certificate

active

07029982

ABSTRACT:
A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer.

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U.S. Appl. No. 10/759,468, filed Jan. 15, 2004, Zhuang et al.
Liu et al.,Electric-pulse-induced reversible resistance change effect in magnetoresistive films, Applied Physics Letters, vol. 76, No. 19; May 8, 2000, pp 2749-2751.

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