Method to increase the emission current in FED displays...

Coating processes – Electrical product produced – Electron emissive or suppressive

Reexamination Certificate

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C445S024000

Reexamination Certificate

active

07101586

ABSTRACT:
A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.

REFERENCES:
patent: 4411734 (1983-10-01), Maa
patent: 4624737 (1986-11-01), Shimbo
patent: 4642620 (1987-02-01), Togashi et al.
patent: 5186670 (1993-02-01), Doan et al.
patent: 5199917 (1993-04-01), MacDonald et al.
patent: 5210472 (1993-05-01), Casper et al.
patent: 5658710 (1997-08-01), Neukermans
patent: 5747384 (1998-05-01), Miyamoto
patent: 5808400 (1998-09-01), Liu
patent: 5825126 (1998-10-01), Kim
patent: 5853492 (1998-12-01), Cathey et al.
patent: 5869169 (1999-02-01), Jones
patent: 5888906 (1999-03-01), Sandhu et al.
patent: 5917213 (1999-06-01), Iyer et al.
patent: 5989999 (1999-11-01), Levine et al.
patent: 6086442 (2000-07-01), Sandhu et al.
John H. Das et al., “Low Work Function Addressable Silicon Field Emission Single Cathode With Integrated Lateral Feedback Resistor and Suspended Heater”, School of Electrical Engineering, pp. 47-51.*
W.A. Mackie, “Work Function Measurements of Diamond Film Surfaces”, Linfield Research Institute, pp. 2041-2045.
Qing-An Huang et al., “The Advantages of N-Type Heavily-Doped Silicon as an Emitter for Vacuum Microelectronics”9thInternational Vacuum Microelectronics Conference, 1996, pp. 155-157.*
B.C. Djubua et al., “Emission Properties of Spindt-Type Cold Cathodes With Different Emission Cone Material”, IEEE Transactions on Electron Device, vol. 38, No. 10, Oct. 1991, pp. 2314-2316.*
Qi-Lue Chen et al., “Investigation of Electron Tunnelling Emitter”, Beijing Vacuum Electronics Research Institute, pp. 488-490.*
J. Ishikawa et al, “Cone-Shaped Metal Insulator Semiconductor Cathode for Vacuum Microelectronics”, Dept. of Electronic Science and Engineering, Japan, pp. 1970-1972.

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