Semiconductor optical device with quantum dots having...

Details Semiconductor optical device with quantum dots having... Semiconductor optical device with quantum dots having...

2006-01-31

2006-01-31

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S082000, C257S098000, C438S022000

Reexamination Certificate

active

06992320

ABSTRACT:
A semiconductor optical device having a substrate having a surface of a first semiconductor having a first lattice constant; and a semiconductor lamination layer formed on the substrate, the semiconductor lamination layer having an active layer which contains quantum dots of a first kind made of a second semiconductor having a second lattice constant in bulk state smaller than the first lattice constant. The active layer may contain quantum dots of a second kind made of a third semiconductor having a third lattice constant in bulk state larger than the first lattice constant. The quantum dots of the first and second kinds are preferably disposed alternately along the thickness direction between the barrier layers having the first lattice constant.

REFERENCES:
patent: 2002/0196827 (2002-12-01), Shields et al.
patent: 11-15477 (1999-01-01), None
patent: 11-50446 (1999-02-01), None
“Effect of GaNAs Stain Compensatin Layer over InAs Quantum Dots Grown by MOMBE”, Sasikala Ganapathy et al., Indium Phosphide and Related Materials Conference, 2002, IPRM. 14TH, May 12-16, 2002, pp. 557-560.
Pinczolits, et al., “Direct Formation of Self-Assembled Quantum Dots Under Tensile Strain by Heteroepitaxy of PbSe on PbTe (111)”, Applied Physics Letters, V. 73, No. 2, pp. 250-252; Jul. 13, 1998.

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