Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-10-21
1996-06-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257144, 257164, 257165, 257327, 257328, H01L 2900
Patent
active
055258166
ABSTRACT:
There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n.sup.- semiconductor layer (3) by double diffusion in corresponding relation to a p type base region (4) of an IGBT cell adjacent thereto, and an emitter electrode (9) formed on and connected to the p type semiconductor region (11) through a contact hole (CH.sub.P) having a width (W.sub.ch2) which is greater than a width (W.sub.ch1) of a contact hole (CH.sub.1), thereby preventing device breakdown due to latch-up by the operation of a parasitic thyristor during an ON state and during an ON-state to OFF-state transition even if main and control electrodes in an active region are reduced in size.
REFERENCES:
patent: 5089864 (1992-02-01), Sakurai
patent: 5119153 (1992-06-01), Korman et al.
patent: 5169793 (1992-12-01), Okabe et al.
patent: 5208471 (1993-05-01), Mori et al.
patent: 5304821 (1994-04-01), Hagino
patent: 5357120 (1994-10-01), Mori
patent: 5391898 (1995-02-01), Hagino
IEEE Transactions on Electron Devices, vol. 36, No. 9-I, Sep. 1989, H. R. Chang, et al., "500-V n-Channel Insulated-Gate Bipolar Transistor with a Trench Gate Structure", pp. 1824-1829.
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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