Integrated power module with reduced thermal impedance

Details Integrated power module with reduced thermal impedance Integrated power module with reduced thermal impedance

2006-01-24

2006-01-24

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S712000, C257S713000, C257S717000, C257S719000, C257S720000

Reexamination Certificate

active

06989592

ABSTRACT:
A dual-side thermal interface and cooling design of an integrated power module is disclosed which effectively reduces the equivalent thermal impedance on the power module by 20%. This in turn reduces the temperature rise of the junction temperature of the power devices inside the power module by 20% with an equivalent load current. As a consequence the weight and volume associated with the conventional cooling mechanism not employing a dual thermal interface is reduced, thus increasing the ambient operating temperature limit of a power converter in the module.

REFERENCES:
patent: 5309983 (1994-05-01), Bailey
patent: 6181556 (2001-01-01), Allman
patent: 6229216 (2001-05-01), Ma et al.
patent: 6442033 (2002-08-01), Liu et al.
patent: 6580611 (2003-06-01), Vandentop et al.
(Exhibit 1) POWEREX CM25MD-24H product specification sheets, (2 pages). Jul. 1997. Powerex, Inc., Youngwood, PA, USA, Tel 412 925 7272. The power module and internal power devices are rated at 1200 V, 25 A. It integrated in: a 3-phase IGBT inverter bridge consisting 6 IGBT devices and 6 power diode devices, a 3-phase uncontrolled rectifier bridge consisting 6 power diode devices and a DC-link voltage brake device as shown in a circuit schematic in Exhibit 2.
(Exhibit 2) Circuit schematic of Integrated Power Module and package outline illustration, CM25MD-24H, Jul. 1997, POWEREX Inc, Youngwood, PA, USA, Tel 412 925 7272.
(Exhibit 3) An example of a damaged prototype of an Integrated Power Module of modified CM25MD-24H. The damage is due to improper contact of the thermal-interface material that has low or insufficient di-electrical strength. May 25, 2004, Dr. Jie Chang, U.S.A. The damaged example module is available for inspection.

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