Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2006-03-14
2006-03-14
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Having organic semiconductive component
C365S151000, C365S153000
Reexamination Certificate
active
07011984
ABSTRACT:
The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores of the porous silicon matrix, and the material has two stable states. A second conductive layer is formed over the porous silicon matrix. A current flow between the first and second conductive layers is influenced by which of the stable states the material is in.
REFERENCES:
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6187604 (2001-02-01), Gilton
patent: 6238974 (2001-05-01), Chern et al.
patent: 6756296 (2004-06-01), Collier et al.
A. Bsiesy et al., “Anodic Oxidation of Porous Silicon Layers Formed on Lightly p-Doped Substrates”, J. Electrochem. Soc., vol. 138, No. 11, Nov. 1991, p. 3450-3456.
Yoshinobu Arita et al., “Formation and Properties of Porous Silicon Film”, Journal of the Electrochem. Soc., vol. 124, No. 2, Feb. 1977, p. 284-295.
Dagani, R., “Building from the Bottom Up”; Nano Technology, Oct. 16, 2000, p. 25, 27-32.
Jacoby, M., “New Tools for Tiny Jobs”, Nano Technology, Oct. 16, 2000, p. 33-35.
Thayer, A.M., “Firms Find a New Field of Dreams”, Nano Technology, Oct. 16, 2000, p. 36-38.
Schulz, W., “Crafting a National Nannotechnology Effort”, Nano Technology, Oct. 16, 2000, p. 39-42.
Schultze, J. W., et al, “Regular Nanostructured System Formed Electrochemically: Deposition of Electroactive Polybihiophene into Porous Silicon”, Electrochimica Acta, vol. 40, No. 10, 1995 p. 1369-1383.
Landau Matthew
Micro)n Technology, Inc.
Thomas Tom
Wells St. John P.S.
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