High linearity smart HBT power amplifiers for CDMA/WCDMA...

Amplifiers – With semiconductor amplifying device – Including plural amplifier channels

Reexamination Certificate

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C330S296000

Reexamination Certificate

active

07026876

ABSTRACT:
A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form transistor arrays, which are combined with bonding wires at a second level to an output micro strip transmission line. A Vbe referenced bias circuit may include a smart function to lower quiescent current.

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patent: 6784748 (2004-08-01), Canyon et al.
patent: 6803643 (2004-10-01), Winslow
patent: 6803821 (2004-10-01), DeFalco et al.
patent: 6842075 (2005-01-01), Johnson et al.

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