Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-12
2006-09-12
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492300, C250S281000, C250S282000, C250S298000, C250S3960ML
Reexamination Certificate
active
07105839
ABSTRACT:
In system for implanting workpieces with an accurately parallel scanned ion beam, a fine-control collimator construct is used to reduce the deviation of the scanned ion beam from a specified axis of parallelism and thereby improve its collimation. The shape of the fine-control collimator matches the ribbon shape of the beam and correction of parallelism in two orthogonal directions is possible. Measurement of the non-parallelism is accomplished by sampling the scanned beam in two planes and comparing timing information; and such measurement is calibrated to the orientation of the workpiece in the plane where ion implantation occurs. Measurement of non-uniformity in the doping profile is accomplished using the same means; and the scan waveform is adjusted to substantially remove any non-uniformity in the doping profile.
REFERENCES:
patent: 5483077 (1996-01-01), Glavish
patent: 6703628 (2004-03-01), Ye et al.
patent: 6835930 (2004-12-01), Benveniste et al.
patent: 2003/0205683 (2003-11-01), Benveniste
Prashker David
Wells Nikita
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