Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-09-12
2006-09-12
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S464000
Reexamination Certificate
active
07105422
ABSTRACT:
To provide a thin film circuit device in which a three-dimensional circuit structure is realized, a thin film circuit device is formed of a first thin film circuit layer and a second thin film circuit layer laminated to each other. The first thin film circuit layer contains a first thin film circuit provided between an underlayer and a protective layer and a lower connection electrode connected to the first thin film circuit and exposed at a part of the bottom surface of the underlayer. The second thin film circuit layer contains a second thin film circuit provided between an underlayer and a protective layer, an upper connection electrode connected to the second thin film circuit and exposed at a part of the top surface of the protective layer, and a lower connection electrode connected to the second thin film circuit and exposed at a part of the bottom surface of the underlayer. The first and the second thin film circuits are bonded to each other so that the lower connection electrode of the first thin film circuit layer is electrically connected to the upper electrode of the second thin film circuit layer.
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Nguyen Cuong
Oliff & Berridg,e PLC
Seiko Epson Corporation
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