Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-07-11
2006-07-11
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S737000, C257S738000, C257S778000, C257S786000, C257S780000, C438S108000, C438S611000, C438S613000, C438S614000
Reexamination Certificate
active
07075184
ABSTRACT:
The invention enhances the reliability of a semiconductor device. A semiconductor device includes: a semiconductor substrate that includes an active element region, an integrated circuit having an active element in the active element region, and an electrode electrically connected to the integrated circuit; a resin layer that is formed on the surface of the semiconductor substrate where the electrode is also formed, so as to avoid the electrode; a wiring layer that extends from the electrode and across the top of the resin layer, and includes a plurality of electrically connecting portions; and an external terminal that is provided on the electrically connecting portions. The plurality of electrically connecting portions includes a first electrically connecting portion and a second electrically connecting portion. The surface area of the first electrically connecting portion is larger than the surface area of the second electrically connecting portion.
REFERENCES:
patent: 6501169 (2002-12-01), Aoki et al.
patent: 6784557 (2004-08-01), Nakamura et al.
patent: 6835595 (2004-12-01), Suzuki et al.
patent: 2001/0000116 (2001-04-01), Shimizu et al.
patent: 2000-58695 (2000-02-01), None
patent: 2001-156206 (2001-08-01), None
Parekh Nitin
Seiko Epson Corporation
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