Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-07-04
2006-07-04
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C427S249800
Reexamination Certificate
active
07070650
ABSTRACT:
There is disclosed a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. There can be provided a method enabling easy and uniform production of a diamond film showing a low electric resistivity value with good reproducibility and few problems concerning handling such as serious bad influence on human bodies and explosiveness during the doping process.
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Kubota Yoshihiro
Noguchi Hitoshi
Hiteshew Felisa
Hogan & Hartson LLP
Shin-Etsu Chemical Co. , Ltd.
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