Stacked capacitor and method for preparing the same

Details Stacked capacitor and method for preparing the same Stacked capacitor and method for preparing the same

2006-05-23

2006-05-23

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

Reexamination Certificate

active

07049205

ABSTRACT:
The present invention discloses a stacked capacitor having interdigital electrodes and method for preparing the same. The stacked capacitor comprises a first interdigital electrode, a second interdigital electrode and a dielectric material sandwiched between the first interdigital electrode and the second interdigital electrode. The first and the second interdigital electrodes comprise a body and a plurality of fingers electrically connected to the body, and the dielectric material can be silicon nitride or silicon oxide. Preferably, fingers of the first interdigital electrode are made of titanium nitride, while fingers of the second interdigital electrode are made of polysilicon. The body of the first and the second interdigital electrodes are preferably made of titanium nitride.

REFERENCES:
patent: 6821837 (2004-11-01), Lian
patent: 2004/0036051 (2004-02-01), Sneh

Affiliated with

Also associated with

Rating

Stacked capacitor and method for preparing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked capacitor and method for preparing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked capacitor and method for preparing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3530825