Precision polysilicon resistor process

Details Precision polysilicon resistor process Precision polysilicon resistor process

2006-09-26

2006-09-26

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S649000, C438S651000, C438S720000

Reexamination Certificate

active

07112535

ABSTRACT:
A process is disclosed for fabricating precision polysilicon resistors which more precisely control the tolerance of the sheet resistivity of the produced polysilicon resistors. The process generally includes performing an emitter/FET activation rapid thermal anneal (RTA) on a wafer having partially formed polysilicon resistors, followed by steps of depositing a protective dielectric layer on the polysilicon, implanting a dopant through the protective dielectric layer into the polysilicon to define the resistance of the polysilicon resistors, and forming a silicide.

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