Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2006-05-23
2006-05-23
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Electron emitter manufacture
C438S022000, C257S010000, C257S163000, C365S118000, C365S217000
Reexamination Certificate
active
07049158
ABSTRACT:
A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
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Benning Paul J.
Chen Zhizhang
Novet Thomas
Ramamoorthi Sriram
Hewlett--Packard Development Company, L.P.
Le Dung A.
Myers Timothy F.
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