Method for fabricating semiconductor device using ArF...

Details Method for fabricating semiconductor device using ArF... Method for fabricating semiconductor device using ArF...

2006-04-11

2006-04-11

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000, C438S725000

Reexamination Certificate

active

07026253

ABSTRACT:
The present invention relates to a method for fabricating a conducting layer pattern using a hard mask of which an upper surface is flattened by the use of ArF exposure light source. The method includes the steps of: forming a conducting layer on a semiconductor substrate; forming hard mask layers on the conducting layer; forming a photoresist pattern on the hard mask layers using an ArF exposure light source in order to form a predetermined pattern; forming a first hard mask pattern by etching a second hard mask layer using the photoresist pattern as an etching mask; etching a first hard mask layer and forming a second hard mask pattern, thereby forming a first resulting structure; depositing an insulation layer on the first resulting structure; and patterning the conducting layer using the second hard mask pattern as an etching mask.

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