Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2006-09-12
2006-09-12
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603070, C029S603110, C029S603130, C029S603140, C029S603160, C029S603180, C360S324120, C360S324200, C360S125330, C427S127000, C427S128000
Reexamination Certificate
active
07103963
ABSTRACT:
A magnetic tunnel junction (MTJ) sensor in which the free layer longitudinal biasing elements are coupled, without insulation, to the free layer outside of the MTJ stack to provide reliable non-shunting MTJ free layer stabilization without extremely thin dielectric layers. In one embodiment, hard magnetic (HM) layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In another embodiment, antiferromagnetic (AFM) bias layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In other embodiments, nonconductive HM layers are disposed either in contact with the free layer outside of the MTJ stack active region and/or in abutting contact with the MTJ stack active region.
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patent: 6327107 (2001-12-01), Komuro et al.
patent: 6836392 (2004-12-01), Carey et al.
patent: 09161230 (1997-06-01), None
“Spin-valve heads utilizing antiferromagnetic NiO layers”; Hamakawa, Y.; Hoshiya, H.; Kawabe, T.; Suzuki, Y.; Arai, R.; Nakamoto, K.; Fuyama, M.; Sugita, Y.; Magnetics, IEEE Transactions on□□vol. 32, Issue 1, Jan. 1996 pp. 149-155.
Hitachi Global Storage Technologies
Kim Paul D.
Zilka-Kotab, PC
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