Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-09-05
2006-09-05
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S401000, C257S408000, C257S347000
Reexamination Certificate
active
07102161
ABSTRACT:
A switching element is provided, which is capable of short-circuiting or opening three or more nodes simultaneously, and in which the surface area occupied on a substrate can be reduced. The switching element of the present invention has an active layer, an insulating film contacting the active layer, a gate electrode contacting the insulating film, and three or more connection electrodes. The active layer has at least one channel forming region and three or more impurity doped regions, and the connection electrodes are each connected to a different impurity region. An impurity region contacting an arbitrary connection electrode contacts only one of the channel forming regions.
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Costellia Jeffrey L.
Nixon & Peabody LLP
Prenty Mark V.
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