Semiconductor device with layered interconnect structure

Details Semiconductor device with layered interconnect structure Semiconductor device with layered interconnect structure

2006-01-24

2006-01-24

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257S767000, C257S768000

Reexamination Certificate

active

06989599

ABSTRACT:
A reliable semiconductor device is provided with a layered interconnect structure that may develop no problem of voids and interconnect breakdowns, in which the layered interconnect structure includes a conductor film and a neighboring film so layered on a semiconductor substrate that the neighboring film is in contact with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|ap−an|/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|bp−bn|/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}<13. In this way, the diffusion of the conductor film is retarded.

REFERENCES:
patent: 4851895 (1989-07-01), Green et al.
patent: 5510651 (1996-04-01), Manier et al.
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 6020266 (2000-02-01), Hussein et al.
patent: 6054331 (2000-04-01), Woo et al.
patent: 05-315336 (1993-11-01), None
patent: 6-238878 (1994-08-01), None
patent: 09-069522 (1997-03-01), None
patent: 10-022274 (1998-01-01), None
patent: 10229084 (1998-08-01), None
patent: 10-256251 (1998-09-01), None
patent: 10-284601 (1998-10-01), None
patent: 2001-505367 (2001-04-01), None
“Diffusion Barrier Between Copper and Silicon”, IBM Technical Disclosure Bulletin vol. 35 No. 1B, pp. 214-215 (Jun. 1992).

Affiliated with

Also associated with

Rating

Semiconductor device with layered interconnect structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with layered interconnect structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with layered interconnect structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3526963