Method of forming light emitter layer

Details Method of forming light emitter layer Method of forming light emitter layer

2006-07-11

2006-07-11

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S027000, C438S048000, C257S050000, C257S051000

Reexamination Certificate

active

07074630

ABSTRACT:
A light emitting layer including a quantum structure and the forming method of forming the same is provided. The forming method includes several steps. At first, a compound dielectric layer forms, including a dielectric layer and an impure dielectric layer, which comprises major elements and impurities. The compound dielectric layer is treated to drive the impurities to form the quantum structure in the dielectric layer according to the difference in characteristic between the major elements and impurities. For example, oxidizing the major elements to drive the impurities of the impure dielectric layer to form the quantum structure inside the dielectric layer, because the oxidizing capability of the major elements is stronger than that of the impurities. The quantum structure and compound dielectric layer construct the light emitting layer.

REFERENCES:
patent: 6157047 (2000-12-01), Fujita et al.
patent: 2002/0197831 (2002-12-01), Todd et al.

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