Field effect transistor

Details Field effect transistor Field effect transistor

2006-01-24

2006-01-24

Blum, David S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S268000

Reexamination Certificate

active

06989558

ABSTRACT:
In a field effect transistor having an active region defined by a device isolation region, and a gate electrode formed over the active region, in the lateral direction of the gate electrode, the source and drain formed in the active region is narrower than the active region at least at the parts proximate to each other to create a rounding region for allowing an additional current to flow through the rounding region. This increases the on-current, with almost no increase in the off-current. The operation speed is thereby increased, without increase in the power consumption during stand-by.

REFERENCES:
patent: 5744371 (1998-04-01), Kadosh et al.
patent: 6646303 (2003-11-01), Satoh et al.
MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Developement, Intel Group Paul Packan, Technology Computer Aided Design, Intel Group Mark Bohr, Portland Technology Developement, Intel Group Intel Technology Journal Q3 1998, pp. 1-19.
International Technology Roadmap for Semiconductors Process Intergration, Devices, and Structures and Emerging Research Devices Author: Unknown 2001 pp. 1-47.

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