Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-08-30
2005-08-30
Cuneo, Kamand (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
Reexamination Certificate
active
06936924
ABSTRACT:
In a semiconductor device having a wire structure, the thickness of a first insulation film substantially corresponds to the depth of a contact hole. A surface of a second insulation film serves as a bottom face of a wire groove. Regarding the contact hole, only a side wall portion intersecting a direction of the wire groove has a substantial taper angle. This configuration can be attained under conditions where an etching selectivity of the first insulation film to the second insulation film is set to be slightly lower and a portion of the second insulation film where a opening edge of an opening portion is exposed is slightly etched during etching process of the wire groove. With a semiconductor device having this structure, a conductive material embedding characteristic can be enhanced, while preventing possibility of short-circuit even when an interval between wires is reduced.
REFERENCES:
patent: 4933303 (1990-06-01), Mo
patent: 5060385 (1991-10-01), Givens
patent: 5629237 (1997-05-01), Wang et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5668413 (1997-09-01), Nanjo
patent: 5686357 (1997-11-01), Howard
patent: 5686760 (1997-11-01), Miyakawa
patent: 5976972 (1999-11-01), Inohara et al.
patent: 6025259 (2000-02-01), Yu et al.
patent: 6060385 (2000-05-01), Givens
patent: 6159862 (2000-12-01), Yamada et al.
patent: 6187671 (2001-02-01), Irinoda
patent: 6271117 (2001-08-01), Cherng
patent: 6291936 (2001-09-01), MacLennan et al.
patent: 6310443 (2001-10-01), MacLennan et al.
patent: 06-037037 (1994-02-01), None
patent: 07-283219 (1995-10-01), None
patent: 07-321204 (1995-12-01), None
patent: 08-017918 (1996-01-01), None
patent: 08-107087 (1996-04-01), None
patent: 08-288390 (1996-11-01), None
patent: 10-177992 (1998-06-01), None
Pisano, N.A., Amendment and Request for Interference (12pp) and Appendix A (9pp) submitted in U.S. Appln. No. 09/818,092 Guthrie, et al., to the USPTO on Nov. 29, 2004, available via USPTO PAIR on or after Nov. 29, 2004.
Prior, G.A., Declaration (6pp) submitted in U.S. Appl. No. 09/818,092 Guthrie, et al., to the USPTO on Nov. 29, 2004, available via USPTO PAIR on or after Nov. 29, 2004.
Sandberg, E., Declaration (5pp) submitted in U.S. Appl. No. 09/818,092 Guthrie, et al., to the USPTO on Nov. 29, 2004, available via USPTO PAIR on or after Nov. 29, 2004.
Turner, D., Letter to Greg Prior (3pp) dated Mar. 31, 2000 submitted in U.S. Appl. No. 09/818,092 Guthrie, et al., to the USPTO on Nov. 29, 2004, available via USPTO PAIR on or after Nov. 29, 2004.
Turner, D. Engineering Service Agreeement (3pp); Statement of Work (1p) dated Mar. 31, 2000 submitted in U.S. Appl. No. 09/818,092 Guthrie, et al., to the USPTO on Nov. 29, 2004, available via USPTO PAIR on or after Nov. 29, 2004.
Turner, D., electronic mail message to Wayne Catlett (2pp) sent on Jun. 26, 2000 submitted in U.S. Appl. No. 09/818,092 Guthrie, et al., to the USPTO on Nov. 29, 2004, available via USPTO PAIR on or after Nov. 29, 2004.
Banner & Witcoff , Ltd.
Cuneo Kamand
Harrison Monica D.
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device with tapered contact hole and wire groove does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with tapered contact hole and wire groove, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with tapered contact hole and wire groove will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3523981