Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-08-16
2005-08-16
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S068000, C257S306000, C257S307000, C257S308000, C257S534000, C438S386000, C438S387000, C438S396000, C349S038000, C349S039000
Reexamination Certificate
active
06930372
ABSTRACT:
A storage capacitor structure of a planar display is disclosed. The storage capacitor includes a substrate, a bottom electrode, an insulator, and a top electrode. The bottom electrode or top electrode has an uneven surface toward the insulator interposed between the two electrodes in order to increase the capacitance of the storage capacitor structure. A method for fabricating such storage capacitor structure is also disclosed. It includes steps of providing a substrate; and forming a bottom electrode, an insulator, and a top electrode in sequence. The bottom electrode or the top electrode has the uneven surface by an etching step.
REFERENCES:
patent: 5350707 (1994-09-01), Ko et al.
patent: 6063661 (2000-05-01), Cheng et al.
patent: 6411347 (2002-06-01), Park et al.
Chiu Chaung-Ming
Tai Ya-Hsiang
Kang Donghee
Madson & Metcalf
Toppoly Optoelectronics Corp.
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