Photomask fabrication method, photomask, and exposure method...

Details Photomask fabrication method, photomask, and exposure method... Photomask fabrication method, photomask, and exposure method...

2005-08-02

2005-08-02

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000

Reexamination Certificate

active

06924068

ABSTRACT:
The present invention is a method capable of fabricating photomasks with improved control of gate line width wafers. More specifically a method is provided to determine a mask correction unit3based on pattern space dependency7in the pattern obtained in the photolithographic process and etching process, and correct the mask fabrication design data1utilizing the mask correction unit3, and fabricate photomasks using photolithographic equipment.

REFERENCES:
patent: 5707765 (1998-01-01), Chen
patent: 5895736 (1999-04-01), Nakajima
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 08-264420 (1996-10-01), None
Ohnuma H et al. “Lithography Computer Aided Design Technology for Embedded Memory Inlogic”, Japanese Journal of Applied Physics, vol. 37, No. 12B, pp. 6686-6688, Dec. 1998, Publication Office Japanese Journal of Applied Physics, Tokyo.
Liebmann L. W. et al. “Optical Proximity Correction, a First Look at Manufacturability”, 14th Annual Symposium on Photomask Technology and Management, vol. 2322, pp. 229-238, Santa Clara, CA Sep. 1994.
Ohnuma H et al. “Fast Chip Level OPC Method on Mask Database”, Japanese Journal of Applied Physics, vol. 3096, pp. 145-153, 1997, Bellingham, VA US.

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