Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-23
2005-08-23
Schillinger, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S347000, C257S350000
Reexamination Certificate
active
06933525
ABSTRACT:
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
REFERENCES:
patent: 5061985 (1991-10-01), Meguro et al.
patent: 5716871 (1998-02-01), Yamazaki et al.
patent: 5831281 (1998-11-01), Kurogane et al.
patent: 6040206 (2000-03-01), Kurogane et al.
patent: 6207481 (2001-03-01), Yi et al.
patent: 6255706 (2001-07-01), Watanabe et al.
patent: 6355510 (2002-03-01), Kim
patent: 6355956 (2002-03-01), Kim
patent: 6362028 (2002-03-01), Chen et al.
patent: 6509614 (2003-01-01), Shih
patent: 6573134 (2003-06-01), Ma et al.
patent: 6664149 (2003-12-01), Shih
patent: 6833883 (2004-12-01), Park et al.
patent: 2004/0135143 (2004-07-01), Harano et al.
patent: 9-148586 (1995-11-01), None
patent: 2000-208773 (1999-01-01), None
Gotoh Jun
Harano Yuichi
Kaneko Toshiki
Yamamoto Masanao
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi Displays Ltd.
Reed Smith LLP
Schillinger Laura M
LandOfFree
Display device and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Display device and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Display device and manufacturing method of the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3523211