Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-12-20
2005-12-20
Barreca, Nicole (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S311000, C428S014000
Reexamination Certificate
active
06977126
ABSTRACT:
A pellicle for protecting a reticle, on which a circuit pattern is formed for manufacturing a semiconductor device, from an attachment of a foreign matter, comprising: a pellicle film having a predetermined thickness, through which a light transmits to the reticle; and a pellicle frame, on which a periphery of the pellicle film contacts, including: a body part having a frame shape, the height of which is substantially constant all over the body part; and an upper protruding part formed on an upper end of the body part that protrudes upward from the upper end of the body part for directly contacting with a surface of the pellicle film, the height of the upper protruding part being constant all over the upper protruding part.
REFERENCES:
patent: 4861402 (1989-08-01), Gordon
patent: 6083577 (2000-07-01), Nakagawa et al.
patent: 58-219023 (1983-12-01), None
patent: 63-27707 (1988-06-01), None
patent: 7-168345 (1995-07-01), None
patent: 09-206723 (1997-08-01), None
patent: 09-319069 (1997-12-01), None
patent: 10-020480 (1998-01-01), None
patent: 2000-122266 (2000-04-01), None
patent: 2000-194121 (2000-07-01), None
Barreca Nicole
McGinn IP Law Group PLLC
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Pellicle, photomask, pellicle frame, and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pellicle, photomask, pellicle frame, and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pellicle, photomask, pellicle frame, and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3520599