Combination insulator and organic semiconductor formed from...

Details Combination insulator and organic semiconductor formed from... Combination insulator and organic semiconductor formed from...

2005-08-16

2005-08-16

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

Reexamination Certificate

active

06930322

ABSTRACT:
A semiconductor structure including an insulator layer formed of a first polymer. The structure also includes an organic semiconductor layer formed of a second polymer. The polymers self-assemble into a well-ordered co-polymer structure with the semiconductor layer positioned adjacent the insulator layer. The structure may be an organic, thin-film semiconductor device including, without limitation, a transistor, a multi-gate transistor, a thyristor, and the like. Also disclosed is a process of manufacturing the semiconductor structure.

REFERENCES:
patent: 6723394 (2004-04-01), Sirringhaus et al.
patent: 6835803 (2004-12-01), Ho et al.
patent: 2005/0009227 (2005-01-01), Xiao et al.
patent: 2000-392411 (2003-03-01), None
AIST Announces World's Thinnest Vertical-Type Double-Gate MOSFET Using Newly Discovered Process, AIST Today International Edition No. 8, pp. 10-12, 2003.
Massimo Lazzair et al., Block Copolymers as a Tool for Nanomaterial Fabrication, Advanced Materials 15, No. 19, pp. 1583-1594, Oct. 2, 2003.

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